Resistive Random Access Memory(RRAM)

RRAM is a novel data storage device that utilizes different resistance states to record data (0 or 1), and it is considered one of the most promising technologies to replace current non-volatile memory. Currently, the resistance-switching layer in RRAM is predominantly produced using vacuum processes, which are expensive and have low material utilization rates. Therefore, by employing wet processes, coupled with low-temperature drying and sintering, it is possible to produce low-cost, highly uniform resistance-switching layer films, achieving excellent resistance-switching characteristics.

A single-bit RRAM employs a 1T1R architecture, where the variable resistance is represented by the red circle. The typical structure consists of a sandwich configuration with the upper electrode, variable resistance layer, and lower electrode.

The I-V electrical properties of materials prepared using sol-gel method, including zinc oxide (ZnO), copper oxide (CuO), and indium gallium zinc oxide (IGZO), along with materials synthesized through the hydrothermal method, such as titanium dioxide (TiO2): (a) IGZO, (b) ZnO, (c) CuO, and (d) TiO2.